Advances in Silicon Carbide Processing and Applications download pdf
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Advances in Silicon Carbide Processing and Applications by Anant Agarwal, Stephen E. Saddow
Download Advances in Silicon Carbide Processing and Applications
Advances in Silicon Carbide Processing and Applications Anant Agarwal, Stephen E. Saddow
Language: English
Page: 228
Format: pdf
ISBN: 1580537405, 9781580537407
Publisher: Artech House Publishers
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices.
Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of todays SiC technology and shows you how SiC can be adopted in developing tomorrows applications.
About the Author
Stephen E. Saddow is an associate professor electrical engineering at the University of South Florida, Tampa, Florida. He earned a Ph.D. in electrical engineering at the University of Maryland, College Park and an M.S. in electrical engineering at Polytechnic University.
Anant K. Agarwal is a Senior Scientist at Cree Inc., Durham, North Carolina, managing the development of SiC power devices. He received a Ph.D. degree in Electrical Engineering, in 1984, from the Lehigh University, Bethlehem, Pa and an M.S. in Electrical Engineering, in 1980, from the University of Tennessee.
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